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Low/high Temperature Test Chamber in semiconductor discrete devices

Abstract: 本文探讨了高低温试验箱在半导体分立器件耐高低温试验中的应用。半导体分立器件在不同温度环境下可能出现参数漂移、击穿电压降低和漏电流增加等问题,因此需要通过高低温试验来测试其耐受能力。试验步骤包括准备器件和测试仪器,将器件安装到测试夹具中,设置试验箱的温度和变化率,记录测试数据并观察异常现象。最终,通过分析数据评估器件在不同温度条件下的可靠性和性能,确保其在实际应用中的稳定性和耐久性。

Semiconductor discrete devices may have various problems under different temperature environments, such as parameter drift, breakdown voltage reduction, leakage current increase, etc. Therefore, high-low temperature tests are required to test their tolerance. In a high temperature environment, semiconductor discrete devices may experience problems such as increased leakage current, while in a low temperature environment, their breakdown voltage may decrease. By conducting high-low temperature resistance tests, the reliability and performance of semiconductor discrete devices under different temperature conditions can be determined, thereby ensuring their stability and durability in practical applications.

High-low temperature test box for high-low temperature resistance test of semiconductor discrete devices with picture 1

The high-low Temperature Test Chamber has an important application in the high-low temperature resistance test of semiconductor discrete devices, and can test the performance and reliability of devices in high-low temperature environments. The following are the general test steps:

  1. Prepare the semiconductor discrete devices to be tested and the required testing instruments according to the test requirements.

  2. Install the device under test into the test fixture, making sure the connections are correct.

  3. Place the test fixture in the high-low Temperature Test Chamber, and set the temperature and temperature change rate according to the test requirements.

  4. Wait for the high-low Temperature Test Chamber to reach the set temperature stable state, and start recording test data.

  5. During the test, observe whether the device is abnormal, such as leakage, short circuit, etc. At the same time, the electrical performance parameters of the device are recorded, such as resistance, capacitance, reverse leakage current, etc.

  6. When the temperature reaches the maximum or minimum temperature required by the end of the test, stop the test and wait for the temperature of the test fixture to return to room temperature.

  7. Process and analyze the test data to judge whether the device meets the test requirements.

Beichao reminds you: During the high-low temperature resistance test of semiconductor discrete devices, a reasonable test temperature and temperature change rate should be set according to the characteristics of the device and the use environment to ensure the accuracy and reliability of the test results.


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