This standard describes a non-contact test method for the measurement of resistivity of semi-insulated silicon carbide single crystals. It is suitable for semi-insulated silicon carbide single crystals with resistivity ranging from 1 × 10 ^ 8 Ω · cm to 1 × 10 ^ 12 Ω · cm. The test method is based on the principle of capacitance charge and discharge, and the resistivity is calculated by real-time monitoring of the change of electricity during the discharge of the sample. The method has high-precision and high efficiency, and is suitable for electrical performance evaluation and quality control of silicon carbide single crystals.
| Status | Active |
|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2022-12-30 00:00:00 | Implementation Date | 2023-04-01 00:00:00 |