This standard specifies the test method for the determination of the resistivity of semiconductor silicon wafers and the sheet resistance of silicon thin films by the non-contact eddy current method. It is suitable for the measurement of the resistivity of silicon single crystal cutting wafers, grinding wafers and polished wafers with a diameter or side length greater than 25mm and a Film thickness of 0.1mm to 1mm, and the measurement of thin film resistance. This standard provides a reliable measurement method for silicon material mass detection and process control in the semiconductor industry.
| Status | Abolish |
|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2009-10-30 00:00:00 | Implementation Date | 2010-06-01 00:00:00 |