This standard specifies a method for displaying and inspecting the crystal integrity of silicon epitaxial layers by chemical corrosion, which is applicable to the detection of stacking dislocations and dislocation Density in silicon epitaxial layers. This method provides a standardized inspection method for evaluating the mass of silicon epitaxial layers by etching with a mixed solution such as chromic acid and hydrofluoric acid, and then observing and counting crystal defects using a microscope.
| Status | Active |
|---|---|
| CCS | H25 | ICS | 77.040 |
| Release Date | 2017-09-29 00:00:00 | Implementation Date | 2018-04-01 00:00:00 |