This standard specifies the test method for the determination of the microtubule Density of silicon carbide single crystal by the molten potassium hydroxide etching method, which is applicable to the mass assessment of silicon carbide single crystal materials. Microtubule defects are revealed by chemical corrosion technology and microscope observation is used to calculate the microtubule Density, providing an accurate quality control means.
| Status | Active |
|---|---|
| CCS | H83 | ICS | 29.045 |
| Release Date | 2014-07-24 00:00:00 | Implementation Date | 2015-02-01 00:00:00 |