This standard specifies the technical requirements for the use of potassium hydroxide etching processes in the fabrication of MEMS devices, and is applicable to the management of potassium hydroxide etching processes. The standard describes the requirements for process operation in detail, including the use of corrosive agents, clean room management, and the application of wet etching techniques. The standard provides technical guidance for ensuring process stability and product mass during the fabrication of silicon-based MEMS devices.
| Status | Active |
|---|---|
| CCS | L55 | ICS | 31.200 |
| Release Date | 2012-05-11 00:00:00 | Implementation Date | 2012-12-01 00:00:00 |