This standard specifies a method for the inspection of the integrity of silicon crystals by selective corrosion techniques, suitable for silicon single crystal ingots or wafers with crystal directions < 111 >, < 100 > or < 110 > and a wide range of resistivity. This method uses chemical corrosion to reveal crystalline defects and combines visual and Metallurgical Microscopy observations to evaluate native defects in silicon crystals. This method is suitable for the integrity detection of silicon single wafers and silicon polycrystalline materials to ensure high-quality applications of the materials.
| Status | Active |
|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2009-10-30 00:00:00 | Implementation Date | 2010-06-01 00:00:00 |