GB/T 14142-1993 "Silicon epitaxial layer crystal integrity inspection method, etching method" stipulates the method of using etching method to check the crystal integrity of silicon epitaxial layer. The standard specifies the test principle, equipment, reagent materials, operation steps and result evaluation. By etching the silicon epitaxial layer, observe the surface morphology to judge the crystal integrity, provide a standard basis for the mass detection and performance evaluation of the silicon epitaxial layer, and help control the mass of related products.
| Status | Abolish |
|---|---|
| CCS | H26 | ICS |
| Release Date | 1993-02-06 00:00:00 | Implementation Date | 1993-10-01 00:00:00 |