GB/T 32189-2015 《Test method for surface roughness of GaN single crystal substrate by atomic force microscope》 Related products
This standard specifies a method for testing the surface roughness of gallium nitride single crystal substrates with Atomic Force Microscope, which is suitable for gallium nitride single crystal substrates with surface roughness less than 10 nm. The standard describes a method for testing the three-dimensional topography of the sample surface with Atomic Force Microscope, which has a high resolution and is an effective means to evaluate the surface roughness of single crystal substrates. The standard provides an accurate test method for surface inspection of gallium nitride single crystal substrates and similar semiconductor materials.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active |
|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2015-12-10 00:00:00 | Implementation Date | 2016-11-01 00:00:00 |
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Extended reading
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