This standard describes the method of processing three-dimensional nanostructures and devices using Ion beam irradiation-induced strain technology. The processing principle, required materials and equipment, environmental conditions and specific processing steps are covered. The technology is mainly used to induce the spatial strain of upright nanowires and planar nanofilms by Ion beam irradiation, so as to construct nanostructures and devices with three-dimensional spatial characteristics. It is suitable for realizing complex structures composed of one-dimensional nanofilms and two-dimensional nanofilms in three-dimensional space. Related terms such as three-dimensional nanostructures and Ion beam irradiation-induced strain are also defined in the standard, providing a basis for precise processing and research.
| Status | Active |
|---|---|
| CCS | A42 | ICS | 07.030 |
| Release Date | 2022-12-30 00:00:00 | Implementation Date | 2023-07-01 00:00:00 |