This standard specifies the method for the determination of oxygen, carbon, boron, phosphorus and other elements in solar-grade silicon wafers and silicon materials by secondary ion mass spectrometry (SIMS). The standard is applicable to the mass analysis of solar-grade single crystal or polysilicon materials, and the detection of the volume content of each element and the relevant technical specifications are provided to provide the basis for the quality assurance of silicon materials.
| Status | Active |
|---|---|
| CCS | H17 | ICS | 77.040.30 |
| Release Date | 2015-12-10 00:00:00 | Implementation Date | 2017-01-01 00:00:00 |