This standard specifies the use of Inductance Coupled Plasma Atomic Emission Spectroscopy (AES) method (ICP-AES) to determine the content of various impurity elements in industrial silicon, including iron, aluminum, calcium, manganese, titanium, nickel, copper, chromium, vanadium and other elements. This method is suitable for industrial silicon product quality control and provides a standardized method for detecting and evaluating these impurity elements to ensure that the product meets the corresponding mass requirements.
| Status | Active |
|---|---|
| CCS | H12 | ICS | 77.120.10 |
| Release Date | 2014-12-05 00:00:00 | Implementation Date | 2015-08-01 00:00:00 |