This standard specifies a method for the determination of phosphorus, arsenic, antimony and other donor impurities in silicon materials for photovoltaic cells by secondary ion Mass Spectrometer (SIMS), which is suitable for samples with a concentration greater than 1 × 10 ³ ³ atoms/cm ². Measurement principles, interference factors and accuracy control are described in detail in the standard, which provides technical guidance for the quantitative analysis of donor impurities in photovoltaic silicon materials.
| Status | Active |
|---|---|
| CCS | H82 | ICS | 29.045 |
| Release Date | 2013-11-12 00:00:00 | Implementation Date | 2014-04-15 00:00:00 |