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GB/T 29849-2013 《Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry》 Related products

This standard specifies a method for the determination of trace metal impurity content on the surface of silicon materials for photovoltaic cells by Inductance Coupled Plasma Mass Spectrometer (ICP-MS) (ICP-MS), which is suitable for the detection of sodium, mg, aluminum, potassium and other metal elements. The standard describes in detail the sample processing methods and possible interference factors in the measurement process, providing technical guidance for the quality control of photovoltaic silicon materials.

This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
Status Active
CCS H82
ICS 29.045
Release Date 2013-11-12 00:00:00
Implementation Date 2014-04-15 00:00:00
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