GB/T 24575-2009 specifies the method of detecting Na, Al, K and Fe on the surface of silicon and epitaxial wafers by secondary ion mass spectrometry. The standard clarifies the detection principle and sets requirements for secondary ion Mass Spectrometer and other equipment and related reagents. Detailed description of sample preparation, including cleaning and fixing of silicon and epitaxial wafers, as well as instrument parameter setting, calibrating process and detection steps. Through this standard, the content of the above elements on the surface of silicon and epitaxial wafers can be accurately detected, providing important technical support for semiconductor material quality control and helping the semiconductor industry to improve product mass.
| Status | Active |
|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2009-10-30 00:00:00 | Implementation Date | 2010-06-01 00:00:00 |