This standard specifies a method for the measurement of carrier concentration in GaAs single crystals by plasma resonance, applicable to doped n-type and p-type GaAs. Measurement ranges are n-GaAs: 1.0 × 10 ^ 7 cm ^ -31.0 × 10 ^ 19 cm ^ -3, p-GaAs: 2.0 × 10 ^ 18 cm ^ -31.0 × 10 ^ 20 cm ^ -3. The method is based on the relationship between carrier concentration in the infrared Light spectrum and the wavelength of the plasma resonance minimum, and the carrier concentration is calculated by measuring this wavelength. This standard applies to the quality control and research of semiconductor materials.
| Status | Active |
|---|---|
| CCS | H17 | ICS | 77.040.01 |
| Release Date | 2006-07-18 00:00:00 | Implementation Date | 2006-11-01 00:00:00 |