This standard describes in detail the method for measuring the resistivity of semiconductor wafers and the sheet resistance of semiconductor thin films using the non-contact eddy current method. Applicable to the resistivity testing of silicon, conductive gallium arsenide and conductive silicon carbide single wafers with a diameter or side length of not less than 25.0 mm and a thickness of 0.1 mm to 1.0 mm, and the resistance measurement of thin films with a film resistance higher than 1,000 times. This standard ensures the accuracy and repeatability of resistance measurement in different semiconductor materials.
| Status | Active |
|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2023-08-06 00:00:00 | Implementation Date | 2024-03-01 00:00:00 |