This standard describes a method for the determination of substitution carbon and interstitial oxygen content in silicon single crystals using low temperature Fourier transform Infrared spectroscepy, IR. Applicable to n-type silicon single crystals with room temperature resistivity greater than 1 Ω · cm and p-type silicon single crystals greater than 32 Ω · cm. The measurement range is 2.5 × 10 ^ 14 cm ^ -3 to 1.5 × 10 ^ 17 cm ^ -3.
| Status | Active |
|---|---|
| CCS | H17 | ICS | 77.040 |
| Release Date | 2023-08-06 00:00:00 | Implementation Date | 2024-03-01 00:00:00 |