This standard describes the method for testing surface defects of 4H-SiC epitaxial wafers by laser scattering. It is suitable for the semiconductor industry where surface quality control of epitaxial wafers is required, especially for the detection of microstructures such as triangular defects.
| Status | Active |
|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2023-08-06 00:00:00 | Implementation Date | 2024-03-01 00:00:00 |