This standard specifies the conversion relationship between the resistivity of boron-doped, phosphorus-doped and arsenic-doped silicon single crystals and the concentration of dopants, which is applicable to a wide range of doping concentrations. The standard can be extended to antimony-doped silicon single crystals and includes conversion methods from resistivity to carrier concentration.
| Status | Active |
|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2014-12-31 00:00:00 | Implementation Date | 2015-09-01 00:00:00 |