GB/T 6617-2009 《Test method for measuring resistivity of silicon wafer using spreading resistance probe》 Related products

This standard specifies the method for measuring the resistivity of silicon wafers by the extended resistance probe method. It is suitable for the measurement of the resistivity of silicon wafers of known crystal orientation and conductive type, as well as the epitaxial layer of silicon wafers of the same type or inverse type of substrate. Measurement range is 10-3 Ω ● cm to 10-2 Ω ● cm. The standard refers to a number of related documents, including Conductivity detector type test methods and silicon single crystal resistivity determination methods.