This standard specifies the method for the measurement of the radial resistivity change of silicon single wafers using the straight row four-probe method. It is suitable for silicon single crystal wafers with a diameter greater than 15 mm and a resistivity of 1X10-3Ω ● cm to 3X103Ω ● cm. The standard provides four selection points, and different radial resistivity changes can be measured according to the selection.
| Status | Active |
|---|---|
| CCS | H17 | ICS | 77.040.01 |
| Release Date | 2007-09-11 00:00:00 | Implementation Date | 2008-02-01 00:00:00 |