GB/T 32282-2015 《Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy》 Related products
This standard specifies a method for testing the dislocation density of GaN single crystals using the cathode Fluorescence Microscope method, which is suitable for GaN single crystals with dislocation densities between 1 × 10 ° and 5 × 10 °/cm ². The standard details the working principle of the cathode Fluorescence Microscope and how to analyze the sample characteristics by the signal generated by the luminescent material under the action of the electron beam. By measuring the strength of the cathode fluorescence signal, the method can effectively evaluate the dislocation density of GaN single crystals.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active |
|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2015-12-10 00:00:00 | Implementation Date | 2016-11-01 00:00:00 |
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